In order to support our customer towards sophisticate research especially in the area of Nanomaterial, Semiconductor, MEMS, PV, LED, Surface Acoustic Wave Technology, Thin Film Coating, and Ultra High Vacuum Technology; we are currently forming business alliance with LJUHV in providing the technology know how and equipment for the above endeavor. Aside from the precision equipment, we are supplying a complete line of pure material, compound, and substrate in various purity for completion of our equipments.

The customized systems are inclusive of: Pulse Laser Deposition Coating, Ultra High Vacuum Magnetron Sputtering, Continuous Vacuum Magnetron Sputtering, Ion Sputtering, Electron Beam Evaporation, Thermal Evaporation with Plasma Assisted Vapor Deposition Equipment and Induction Coupled Plasma. LJ-UHV Customized System are featured with Human-Machine Interface (HMI) controller for user convenience in handling their system.

 

 

UHV Sputtering System

   

Confocal Sputtering System

 

Sputter cathode size from 2 inch to 6 inch.

Can setting 2 ~ 5 sputter cathodes.

Also can use flex mount sputter cathode.

To adjust the sputtering angle .

LoadLock Chamber is optional.

   

Compact PLD System

   

Compact PLD System

 

Laser Source: Excimer Laser or Nd-YAG Laser

   

Plused Laser Deposition System

   

 

High Vacuum PVD Coating System

High Vacuum E-Beam Evaporation System

   

Thermal Evaporation System

Thermal Evaporation System for Reserach

   

Ion Beam Sputter Deposition

 

Ion Beam Sputter Deposition (IBSD)

Reactive Ion Beam Sputter Deposition (RIBSD)

Ion BeamSputterDeposition (IBSD)

  • High-End Thin Film Deposition Process
  • Lower Pressure Sputter Deposition (10-4 Torr), Sputtered Atoms Retain Kinetic Energy Due to Minimal Scatting in Low Pressure Environments
  • High Quality, Smooth, Pin Hole Free Films
  • Enhanced Adhesion and Micro-structure Control
  • Yields Excellent Coverage at Small Thicknesses and on High
  • Aspect Ratio Features
  • Independent Control of Ion Beam Parameters Allows User to Engineer Film for Desired Properties
  • Low energy ion assist with end-Hall ion sources
  • Typically, Film Properties from Ion Beam Deposition Exceed those Deposited by Evaporation or Magnetron Sputtering
 

 

 

PECVD

 

 

 

      

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